Location: the QT library (F007)

Time: 14:00 hrs

We study the possibility of Cooper-pair-based radiative recombination in semiconductors. Cooper-pair injection into InGaAs semiconductor is demonstrated with Nb-InGaAs-Nb Josephson junction properties on a LED structure. Forward bias of the LED results in electroluminescence (EL) output and we report the enhancement of the EL output more than one-order of magnitude below the critical temperature (Tc) of Nb superconductivity. Time-resolved lifetime measurements show the reduction of the radiative recombination lifetime below Tc and this is attributed to the Cooper-pair-based radiative recombination enhancement.